A 900 MHz Zero‐IF RF Transceiver for IEEE 802.15.4g SUN OFDM Systems. Issue 3 (1st June 2014)

• Record Type: Journal Article
• Authors: Kim, Changwan; Lee, Seungsik; Choi, Sangsung
• Is Part Of: ETRI journal. Volume 36:Issue 3(2014)
• Page Start: 352
• Page End: 360
• Publication Date: 2014-06-01
• Subjects: CMOS -- IEEE 802.15.4g -- low‐noise amplifier -- passive mixer -- PLL -- RF transceiver -- SUN -- WPAN; Telecommunication -- Periodicals; Electronics -- Periodicals; Electronics; Telecommunication; Periodicals; Periodicals; 621.38205
• DOI: 10.4218/etrij.14.0113.0549
• Languages: English
• ISSNs: 1225-6463

Abstract

Abstract : This paper presents a 900 MHz zero‐IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ΔΣ fractional‐N frequency synthesizer. In the RF front end, re‐use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low‐noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current‐driven passive mixer in Rx and voltage‐mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty‐cycle in local oscillator clocks. The overall Rx‐baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a 0.18 μm CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of −2 dBm, a sensitivity level of −103 dBm at 100 Kbps with PER < 1 %, an Rx input P1dB of −11 dBm, and an Rx input IP3 of −2.3 dBm.