Cite
HARVARD Citation
Bae, S. et al. (2013). 380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure. ETRI journal. 35 (4), pp. 566-570. [Online].
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Bae, S. et al. (2013). 380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure. ETRI journal. 35 (4), pp. 566-570. [Online].