Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition. Issue 13 (15th February 2018)

• Record Type: Journal Article
• Authors: Hasegawa, Kei; Takazawa, Chiaki; Fujita, Makoto; Noda, Suguru; Ihara, Manabu
• Is Part Of: CrystEngComm. Volume 20:Issue 13(2018)
• Page Start: 1774
• Page End: 1778
• Publication Date: 2018-02-15
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c7ce02162c
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Monocrystalline, low defect Si thin films fabricated via 1-minute vapor deposition on a double porous layer treated by zone heating recrystallization. Abstract : Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.