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HARVARD Citation
Zhao, J. et al. (2015). A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 21-28. [Online].
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Zhao, J. et al. (2015). A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 21-28. [Online].