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HARVARD Citation
Downey, B. et al. (2015). Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs. Solid-state electronics. pp. 12-17. [Online].
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Downey, B. et al. (2015). Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs. Solid-state electronics. pp. 12-17. [Online].