Cite
HARVARD Citation
Li, W. et al. (2015). An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects. Solid state communications. pp. 28-32. [Online].
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Li, W. et al. (2015). An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects. Solid state communications. pp. 28-32. [Online].