Synthesis and structural analysis of dimethylaminophenyl-end-capped diketopyrrolopyrrole for highly stable electronic devices with polymeric gate dielectric. (14th February 2018)

• Record Type: Journal Article
• Authors: Kumar, Amit; Palai, Akshaya Kumar; Shin, Tae Joo; Kwon, Jaehyuk; Pyo, Seungmoon
• Is Part Of: New journal of chemistry. Volume 42:Number 6(2018)
• Page Start: 4052
• Page End: 4060
• Publication Date: 2018-02-14
• Subjects: Chemistry -- Periodicals; Chimie -- Périodiques; 540
• DOI: 10.1039/c8nj00545a
• Languages: English
• ISSNs: 1144-0546

Abstract

Abstract : The synthesis and structural analysis of DPP(PhNMe2 )2, a stable diketopyrrolopyrrole derivative end-capped with a strongly electron-donating dimethylaminophenyl moiety is reported and the origin of ambient stability is analyzed in detail. Abstract : Herein, we report the synthesis and structural analysis of 3, 6-bis(5-(4-(dimethylamino)phenyl)thiophen-2-yl)-2, 5-dihexadecylpyrrolo[3, 4- c ]pyrrole-1, 4(2 H, 5 H )-dione [DPP(PhNMe2 )2 ], a stable diketopyrrolopyrrole derivative end-capped with a strongly electron-donating dimethylaminophenyl moiety. Optical and electrochemical characterization determined the band gap, HOMO, and LUMO energies of the above compound as 1.63, −4.65, and −3.02 eV, respectively. The prepared DPP(PhNMe2 )2 was fabricated into thin films to construct field-effect transistors and resistance load-type inverters, the responses of which to static/dynamic electrical stimuli were analyzed in detail. Specifically, field-effect transistors demonstrated stable output/transfer characteristics during 100 sweeping cycles and showed excellent performance stability (over 300 days) under ambient conditions, with the corresponding dynamic switching characteristics being well maintained during 500 on–off cycles. The above inverters also showed good performance under ambient conditions. To clarify the origin of this performance enhancement, the above thin films were subjected to structural analysis by atomic force microscopy, density function theory calculations, and two-dimensional grazing incidence X-ray diffraction, which revealed that DPP(PhNMe2 )2 molecules were stacked over the surface of the gate dielectric via their NMe2 groups. Based on the obtained results, the improved device performance was ascribed to the end-on orientation and close packing of DPP(PhNMe2 )2 molecules along the π–π stacking direction.