Full imitation of synaptic metaplasticity based on memristor devices. Issue 13 (6th March 2018)
- Record Type:
- Journal Article
- Title:
- Full imitation of synaptic metaplasticity based on memristor devices. Issue 13 (6th March 2018)
- Main Title:
- Full imitation of synaptic metaplasticity based on memristor devices
- Authors:
- Wu, Quantan
Wang, Hong
Luo, Qing
Banerjee, Writam
Cao, Jingchen
Zhang, Xumeng
Wu, Facai
Liu, Qi
Li, Ling
Liu, Ming - Abstract:
- Abstract : The various types of metaplasticity are fully mimicked using memristors for the first time. Abstract : Neuromorphic engineering is a promising technology for developing new computing systems owing to the low-power operation and the massive parallelism similarity to the human brain. Optimal function of neuronal networks requires interplay between rapid forms of Hebbian plasticity and homeostatic mechanisms that adjust the threshold for plasticity, termed metaplasticity. Metaplasticity has important implications in synapses and is barely addressed in neuromorphic devices. An understanding of metaplasticity might yield new insights into how the modification of synapses is regulated and how information is stored by synapses in the brain. Here, we propose a method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors. In addition, the metaplasticity facilitation of long-term potentiation (MFLTP) and the metaplasticity facilitation of long-term depression (MFLTD) are also achieved. Moreover, the mechanisms of metaplasticity in memristors are discussed. Additionally, the proposed method to mimic the metaplasticity is verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switching random access memory, and conductive bridging random access memory (CBRAM). This is a further step toward developing fully bio-realistic artificial synapses using memristors. TheAbstract : The various types of metaplasticity are fully mimicked using memristors for the first time. Abstract : Neuromorphic engineering is a promising technology for developing new computing systems owing to the low-power operation and the massive parallelism similarity to the human brain. Optimal function of neuronal networks requires interplay between rapid forms of Hebbian plasticity and homeostatic mechanisms that adjust the threshold for plasticity, termed metaplasticity. Metaplasticity has important implications in synapses and is barely addressed in neuromorphic devices. An understanding of metaplasticity might yield new insights into how the modification of synapses is regulated and how information is stored by synapses in the brain. Here, we propose a method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors. In addition, the metaplasticity facilitation of long-term potentiation (MFLTP) and the metaplasticity facilitation of long-term depression (MFLTD) are also achieved. Moreover, the mechanisms of metaplasticity in memristors are discussed. Additionally, the proposed method to mimic the metaplasticity is verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switching random access memory, and conductive bridging random access memory (CBRAM). This is a further step toward developing fully bio-realistic artificial synapses using memristors. The findings in this study will deepen our understanding of metaplasticity, as well as provide new insight into bio-realistic neuromorphic engineering. … (more)
- Is Part Of:
- Nanoscale. Volume 10:Issue 13(2018)
- Journal:
- Nanoscale
- Issue:
- Volume 10:Issue 13(2018)
- Issue Display:
- Volume 10, Issue 13 (2018)
- Year:
- 2018
- Volume:
- 10
- Issue:
- 13
- Issue Sort Value:
- 2018-0010-0013-0000
- Page Start:
- 5875
- Page End:
- 5881
- Publication Date:
- 2018-03-06
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c8nr00222c ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 6158.xml