Cite
HARVARD Citation
Ma, Y. et al. (2018). High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb. Physica status solidi. 215 (5), p. n/a. [Online].
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Ma, Y. et al. (2018). High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb. Physica status solidi. 215 (5), p. n/a. [Online].