New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement. Issue 1693 (23rd June 2014)

• Record Type: Journal Article
• Authors: Toure, M.; Berenguier, B.; Ottaviani, L.; Pasquinelli, M.; Palais, O.; Di Lauro, P.; Portail, M.; Chenot, S; Wood, T.; Kobor, D.
• Is Part Of: MRS proceedings. Issue 1693:(2014)
• Publication Date: 2014-06-23
• Subjects: photovoltaic, -- chemical vapor deposition (CVD) (deposition), -- devices; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.611
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: An actual trend to enhance solar cells efficiency is to build multijunction cells, creating a bandshape wavelength collection. However, the best multijuction cells are actually made of III-V compounds when silicon and its alloys don't lead to high efficiency devices. In this article, we study a 3C-SiC/Si heterojunction as a first step for 3C-SiC/Si tandem cells. Four samples were fabricated by depositing 3C-SiC on Si wafers with different SiC doping levels. Simulations of the structures are performed, as well as optical and electrical characterizations of the heterojunction cells.