Investigation of Novel Te precursor (i-C3H7)2Te for MoTe2 Fabrication. (30th January 2018)

• Record Type: Journal Article
• Authors: Hibino, Y.; Ishihara, S.; Sawamoto, N.; Ohashi, T.; Matsuura, K.; Machida, H.; Ishikawa, M.; Sudo, H.; Wakabayashi, H.; Ogura, A.
• Is Part Of: MRS advances. Volume 3:Number 6/7(2018)
• Page Start: 321
• Page End: 326
• Publication Date: 2018-01-30
• Subjects: layered, -- chemical vapor deposition (CVD) (deposition), -- sputtering; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2018.126
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: We report the investigation on the properties of a novel Te precursor (i-C3 H7 )2 Te and its effectiveness in fabricating MoTe2 . The vapor pressure of the precursor was obtained by measuring the pressure as a function of its temperature in a sealed chamber. As a result it showed a high vapor pressure of 552.1 Pa at room temperature. The decomposition of the precursor was also investigated using DFT calculation. It was shown that the most likely reaction during the course of the decomposition of (i-C3 H7 )2 Te is (i-C3 H7 )2 Te → H2 Te + 2 C3 H7 . The effectiveness of the precursor on the fabrication of MoTe2 was also investigated. Sputter-deposited MoO3 was tellurized in a quartz-tube furnace at the temperature up to 440°C. The resulting film showed that the 80% of the original MoO3 was tellurized to form MoTe2 . It was also shown that further optimization of tellurization is required in order to prevent formation of metal Mo and elemental Te.