Cite
HARVARD Citation
Yang, X. et al. (2018). Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth. CrystEngComm. 20 (12), pp. 1705-1710. [Online].
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Yang, X. et al. (2018). Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth. CrystEngComm. 20 (12), pp. 1705-1710. [Online].