A General Method for the Chemical Synthesis of Large‐Scale, Seamless Transition Metal Dichalcogenide Electronics. Issue 12 (15th January 2018) - Li, Li
Abstract: The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large‐scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS2, WS2, and MoSe2 ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT‐patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS2 –MoS2 /CNT devices have Ohmic contacts between MoS2 /CNT hybrid electrodes and MoS2 channels. In addition, MoS2 –MoS2 /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold‐contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS2 –MoS2 /CNT photodetectors is applied for image sensing. Abstract : Seamless and large‐area transition metal dichalcogenide (TMD) electronics with semiconducting TMD channels and TMD/CNT hybrid electrodes are synthesized by chemical vapor deposition. Ohmic contacts are formed between the MoS2 /CNT hybrid electrodes and MoS2 channels. In addition, MoS2 –MoS2 /CNT devices show enhanced mechanical stability and photoresponsivity compared with metal‐contacted devices, which makes them suitable for flexible optoelectronics.