A 65 nm linear broad-band differential Low Noise Amplifier using post distortion technique. (April 2018)

• Record Type: Journal Article
• Authors: Zokaei, Abolfazl; Amirabadi, Amir
• Is Part Of: Microelectronics journal. Volume 74(2018)
• Page Start: 24
• Page End: 33
• Publication Date: 2018-04
• Subjects: Low noise amplifier -- Non-linear feedback -- Voltera-series -- Monte carlo simulations; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2018.01.007
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: The paper describes the design of a differential broadband LNA covering the frequency range from 800 MHz to 5 GHz in 65 nm CMOS technology. The work proposes a novel linearization technique for high-frequency wide-band applications using an active feedback as post-distortion. The technique is applied to a wide-band differential common gate (CG) LNA employing noise cancelation method. Post-layout simulations exhibit that the proposed technique increases I I P 3 and P 1 d B considerably to +11.9 and +1 dBm, respectively at 1.8 GHz. The LNA achieves voltage gain of 13.7–13.9 dB, noise figure of 3–3.28 dB, and S11 less than −10 dB, while consuming only 16.5 mW. The layout schematic occupies 0.515 × 0.220 m m 2 of chip area.