Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride. (9th January 2018)

• Record Type: Journal Article
• Authors: Saravade, Vishal G.; Ferguson, Cameron H.; Ghods, Amirhossein; Zhou, Chuanle; Ferguson, Ian T.
• Is Part Of: MRS advances. Volume 3:Number 3(2018)
• Page Start: 159
• Page End: 164
• Publication Date: 2018-01-09
• Subjects: nitride, -- spintronic, -- ferromagnetic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2018.11
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Anomalous Hall effect was observed at room temperature in MOCVD-grown GaGdN from a (TMHD)3 Gd source, which can contain oxygen in its organic ligand. GaN, and GaGdN grown using a Cp3 Gd precursor which does not contain oxygen only showed the ordinary Hall effect. This indicates that oxygen could have a role in magnetic properties of GaGdN. The relationship between the anomalous Hall conductivity and longitudinal conductivity indicated that metallic conduction, hopping of carriers, and scattering-independent mechanisms are likely responsible for the ferromagnetism. However, this still requires further clarification.