Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant. (2nd March 2018)

• Record Type: Journal Article
• Authors: Zhou, Bing; Wang, Zhifeng; Liu, Zhubo; Piliptsou, D.G.; Xu, Bin; Yu, Shengwang; Wu, Yanxia; Rogachev, A.V.
• Is Part Of: Surface and interface analysis. Volume 50:Number 4(2018)
• Page Start: 506
• Page End: 515
• Publication Date: 2018-03-02
• Subjects: ionic nitrogen doping -- mechanical property -- pulse frequency -- target current -- α‐C:N:Ti thin film; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6409
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N + :Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp 2 clusters. The α‐C:N + :Ti films present smoother surface and smaller particle size than for α‐C:N2 :Ti films. N ions facilitate the formation of N‐sp 3 C bonds in the α‐C:N + :Ti films, and α‐C:N + :Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N2 :Ti (10 Hz, 80 A) film.