UV‐Induced Multilevel Current Amplification Memory Effect in Zinc Oxide Rods Resistive Switching Devices. (19th January 2018)

• Record Type: Journal Article
• Authors: Russo, Paola; Xiao, Ming; Liang, Robert; Zhou, Norman Y.
• Is Part Of: Advanced functional materials. Volume 28:Number 13(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-19
• Subjects: cathodic deposition -- photo‐multilevel current amplification -- UV irradiation -- zinc oxide rods; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201706230
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Zinc oxide (ZnO) devices represent an alternative in the semiconductor technology for their application in resistive switching memory devices and ultraviolet (UV) photodetectors due to their chemical and electrical properties. The multilevel current amplification of ZnO rods RRAM devices induced by UV light illumination is reported here for the first time. The resistive switching mechanism underlying in this type of devices is attributed to the formation of conductive filaments composed of oxygen vacancies. The analysis of the photodecay processes carried out on the devices fabricated with different electrodes shows that the type of interface (Ag/ZnO and Au/ZnO) affects the surface barrier height, which influences the photodecay rate. It is shown that by applying UV light, higher relaxation constants (slower photodecay rates) are obtained and lead to multilevel current amplification behavior. Abstract : Resistive switching devices made of ZnO rods show multilevel current amplification upon exposure to ultraviolet (UV) light . The rods are grown by cathodic deposition and from the electrical measurements, an improvement of the device's stability under UV irradiation together with a multilevel current amplification behavior induced by the slower photodecay process is observed.