Cite
HARVARD Citation
Sinha, N. et al. (n.d.). Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. Materials research bulletin. pp. 539-543. [Online].
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Sinha, N. et al. (n.d.). Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. Materials research bulletin. pp. 539-543. [Online].