The Significant Role of Hydrophilic and Hydrophobic Interfaces in Graphene‐Based 1D Heterostructures for Highly Enhanced Electron Emission. Issue 4 (21st December 2017)

• Record Type: Journal Article
• Authors: Huang, Bohr‐Ran; Kathiravan, Deepa; Tu, Chao‐wei; Saravanan, Adhimoorthy
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 4(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-21
• Subjects: graphene -- high field enhancement factor -- hydrophilic SiNWs -- hydrophobic SiNWs; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201701148
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: The role of hydrophilic and hydrophobic substrate with graphene is crucial to define the interfacial properties of graphene (G)‐based heterostructures in the field of electronic device applications. Herein, the novel strategy of graphene wrapped hydrophilic/hydrophobic silicon nanowires (SiNWs) heterostructure is reported for highly enhanced electron field emission (EFE) studies with low turn‐on field. The combined effect of sharp edged graphene layers induced by different kinds of SiNWs is envisioned to enhance field enhancement factors and turn‐on voltage. The systematic results show the best EFE properties of hydrophilic SiNWs‐G based field emitters, with a lower turn‐on voltage of 0.53 V µm −1, a current density of 2.7 mA cm −2, and a higher field enhancement factor (β) of 14825. In addition, both the SiNWs‐G‐based field emitters are tested as the practical flat panel displays, where the hydrophilic‐based display exhibits at low voltage as 210 V. The superior EFE performance of hydrophilic SiNWs‐G based field emitters are ascribed to their large distortion field. Since more electrons can be trapped for easy tunneling, this increases the emission sites, and thereby contributes to a high enhancement field. This striking result from hydrophilic SiNWs‐G field emitters can be tailored for high‐performance EFE device applications. Abstract : A novel strategy of hydrophilic and hydrophobic silicon nanowires (SiNWs)‐graphene heterostructures is devised to achieve electron field emission with low turn‐on voltage and high field enhancement factor. The morphological analyses reveal that the surface coverage on hydrophilic SiNWs has more curled edges. Moreover, the test of present device as flat panel displays exhibits low voltage, attributed to FN tunneling.