Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer. Issue 2 (20th November 2017)

• Record Type: Journal Article
• Authors: Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming‐Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun
• Is Part Of: Advanced science. Volume 5:Issue 2(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-20
• Subjects: CZTSe -- double layer distribution -- kesterite -- solar cells; Science -- Periodicals; 505
• DOI: 10.1002/advs.201700645
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract: Double layer distribution exists in Cu2 SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double‐layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu‐Sn‐Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated. Abstract : The double layer distribution in Cu2 ZnSnSe4 (CZTSe) solar cells can be eliminated entirely by increasing Sn content of the metallic precursor, and thus modifying the back contact of CZTSe solar cells and thus reducing the series resistance to a low level. The efficiency of CZTSe solar cell is improved from 5.07% with double layer distribution to 7.2% without double layer distribution.