Monolayer Multijunctions: Synthesis of In‐Plane Artificial Lattices of Monolayer Multijunctions (Adv. Mater. 7/2018). Issue 7 (12th February 2018)

• Record Type: Journal Article
• Authors: Chiu, Kuan‐Chang; Huang, Kuan‐Hua; Chen, Chun‐An; Lai, Ying‐Yu; Zhang, Xin‐Quan; Lin, Erh‐Chen; Chuang, Meng‐Hsi; Wu, Jenn‐Ming; Lee, Yi‐Hsien
• Is Part Of: Advanced materials. Volume 30:Issue 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-12
• Subjects: 2D materials -- edge epitaxy -- heterostructures -- monolayers -- transition metal dichalcogenides (TMDs); Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201870043
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : In article number1704796, Yi‐Hsien Lee and co‐workers report the synthesis of in‐plane artificial lattices of monolayer multijunctions with multistep chemical vapor deposition (CVD) processes. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of the in‐plane artificial lattices of these WS2 /WSe2 /MoS2 multijunctions at reduced growth temperatures. This synthesis method opens a new avenue toward low‐dimensional channels and artificial lattices of diverse material genomes.