A Black Phosphorus Carbide Infrared Phototransistor. Issue 6 (21st December 2017)

• Record Type: Journal Article
• Authors: Tan, Wee Chong; Huang, Li; Ng, Rui Jie; Wang, Lin; Hasan, Dihan Md. Nuruddin; Duffin, Thorin Jake; Kumar, Karuppannan Senthil; Nijhuis, Christian A.; Lee, Chengkuo; Ang, Kah‐Wee
• Is Part Of: Advanced materials. Volume 30:Issue 6(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-21
• Subjects: black phosphorus carbide -- broadband detectors -- infrared detectors -- low noise -- tunable responsivity; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201705039
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet‐of‐things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak‐signal and high‐speed detections. Here, a novel 2DM, black phosphorous carbide (b‐PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b‐PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b‐PC phototransistor achieves a peak responsivity of 2163 A W −1 and a shot noise equivalent power of 1.3 fW Hz −1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high‐speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top‐performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V. Abstract : A black phosphorus carbide infrared phototransistor with a wide absorption spectrum that spans most molecular vibrational fingerprints up to 8000 nm is realized. The device achieves a peak responsivity of 2163 A W −1 and a shot noise equivalent power of 1.3 fW Hz −1/2 at 2004 nm along with a gate‐tunable response time of 0.7 ns, making it versatile for sensing applications in future Internet‐of‐Things.