Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (Adv. Electron. Mater. 2/2018). (12th February 2018)

• Record Type: Journal Article
• Authors: Ji, Xu; Chen, Liang; Xu, Mengxuan; Dong, Mei; Yan, Kun; Cheng, Shuang; Kong, Xueqian; Wang, Tongyao; Liu, Jiandang; Gu, Bingchuan; Wang, Huanhua; Liu, Zhiyong; Wang, Shuao; Huang, Feng; Ouyang, Xiaoping
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 2(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-12
• Subjects: crystal imperfection modulation engineering -- electrochemical doping -- H elimination -- wide band gap semiconductor -- ZnO; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201870010
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Controllable and repeatable crystal‐imperfection‐modulation engineering (CIME) is important for the development of semiconductor science and technology. A universal and feasible CIME for ZnO based on creative electrochemical doping and strong oxidizing thermodynamic annealing processes is described by Feng Huang, Xiaoping Ouyang, and co‐workers in article number1700307 . Their method could be of major benefit for new wide‐band‐gap semiconductor devices.