Monolayer Semiconductors: Electron Field Emission of Geometrically Modulated Monolayer Semiconductors (Adv. Funct. Mater. 7/2018). (12th February 2018)

• Record Type: Journal Article
• Authors: Yang, Tung‐Han; Chiu, Kuan‐Chang; Harn, Yeu‐Wei; Chen, Han‐Yi; Cai, Ren‐Fong; Shyue, Jing‐Jong; Lo, Shen‐Chuan; Wu, Jenn‐Ming; Lee, Yi‐Hsien
• Is Part Of: Advanced functional materials. Volume 28:Number 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-12
• Subjects: 2D material -- electron field emission -- heterostructure -- MoS2 monolayer -- transition metal dichalcogenide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201870046
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Recently, engineering of 2D semiconductors has been widely highlighted for diverse potential applications. In article number1706113, Yi‐Hsien Lee and co‐workers report highly efficient and stable electron emission of monolayer semiconductors in low turn‐on electric fields. Geometrical control by integrating 1D nanostructure arrays for geometrical modulation is key to this achievement.