In situ Raman spectroscopy of cubic boron nitride to 90 GPa and 800 K. (January 2015) - Ono, Shigeaki
Abstract: The temperature and pressure dependences of the Raman spectrum of the transverse-optical mode of cubic boron nitride were calibrated for applications to a Raman spectroscopy pressure sensor in optical cells to about 800 K and 90 GPa. A significant deviation from linearity of the pressure dependence is confirmed at pressures above 20 GPa. At ambient temperature, d v /d P slopes are 3.41(7) and 2.04(7) cm −1 /GPa at 0 and 90 GPa, respectively. A polynomial expression is used to fit the pressure–temperature dependence of the Raman line. The pressure dependence does not significantly change with temperature, as determined from experiments conducted up to 800 K. At 0 GPa, the d v /d P slope is 3.46(7) cm −1 /GPa at 800 K. At pressures above 90 GPa, the Raman spectrum of the transverse-optical mode cannot be observed because of an overlap of the signals of cubic boron nitride and diamond used as the anvils in the high-pressure cell. Graphical abstract: Highlights: The Raman band of c-BN is measured at high pressures and high temperatures. An accurate pressure scale using c-BN Raman band is established. The pressure scale can be used in the diamond anvil cell experiments.