Influence of inverse spinel structured CuGa2O4 on microwave dielectric properties of normal spinel ZnGa2O4 ceramics. Issue 4 (28th November 2017)

• Record Type: Journal Article
• Authors: Lu, Xiaochi; Bian, Wenjie; Li, Yaoyao; Zhu, Haikui; Fu, Zhenxiao; Zhang, Qitu
• Is Part Of: Journal of the American Ceramic Society. Volume 101:Issue 4(2018)
• Page Start: 1646
• Page End: 1654
• Publication Date: 2017-11-28
• Subjects: dielectric materials/properties -- gallium/gallium compounds -- spinels; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.15264
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: Spinel Zn1‐ x Cu x Ga2 O4 ( x = 0‐0.15) ceramics were prepared by the conventional solid‐state method. Only a single phase was indexed in all samples. The continuous lattice contraction of ZnGa2 O4 unit cell was caused by Cu 2+ substitution, and the lattice parameter shows a linear correlation with the content of Cu. The refined crystal structure parameters suggest that Cu 2+ preferentially occupies the octahedron site, and the degree of inversion of Zn1‐ x Cu x Ga2 O4 ( x = 0‐0.15) ceramics almost equals to the content of Cu 2+ . The relative intensity of A*1g mode in Raman spectra confirm that the degree of inversion climbed with the growing content of Cu 2+ . The experimental and theoretical dielectric constant of Zn1‐ x Cu x Ga2 O4 ceramics fit well. Zn1‐ x Cu x Ga2 O4 ( x = 0.01) ceramics sintered at 1400°C for 2 h exhibited good microwave dielectric properties, with ε r = 9.88, Q × f = 131, 445 GHz, tan δ = 6.85 × 10 −5, and τ f = −60 ppm/°C.