Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor. Issue 3 (28th December 2017)

• Record Type: Journal Article
• Authors: Di Paola, Davide Maria; Velichko, Anton V.; Bomers, Mario; Balakrishnan, Nilanthy; Makarovsky, Oleg; Capizzi, Mario; Cerutti, Laurent; Baranov, Alexei N.; Kesaria, Manoj; Krier, Anthony; Taliercio, Thierry; Patanè, Amalia
• Is Part Of: Advanced optical materials. Volume 6:Issue 3(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-28
• Subjects: hydrogenation -- mid‐infrared -- plasmonics -- polaritons -- semiconductors; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201700492
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing. Abstract : Mid‐infrared surface plasmon polaritons are created in the highly H‐doped In(AsN) semiconductor. The spatial modulation of the plasmon resonance is achieved by laser writing: the photon excitation tailors the chemical composition of the semiconductor by dissociation of the NH bond, thus offering a new route for plasmonic patterning in the mid‐infrared spectral range.