Green Electroluminescence of Al/Tb/Al/SiO2 Devices Fabricated by Electron Beam Evaporation. Issue 3 (18th October 2017)

• Record Type: Journal Article
• Authors: Frieiro, Juan Luis; Blázquez, Oriol; López‐Vidrier, Julian; López‐Conesa, Lluis; Estradé, Sònia; Peiró, Francesca; Ibáñez, Jordi; Hernández, Sergi; Garrido, Blas
• Other Names: Boninelli Simona guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 3(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-10-18
• Subjects: electron beam evaporation -- luminescence -- nanomultilayers -- rare earth ions -- terbium; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700451
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this work, the fabrication and the structural, optical and electrical properties of Al‐Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p‐type Si substrates. Optical characterization shows a narrow and strong emission in the green spectral range, indicating the optical activation of Tb 3+ ions. The electrical characterization revealed conduction limited by the electrode, although trapped‐assisted mechanisms can also contribute to transport. The electroluminescence analysis revealed also emission from Tb 3+ ions, a promising result to include this material in future optoelectronics applications as integrated light‐emitting devices. Abstract : Optoelectronic devices consisting of Al/Tb/Al/SiO2 nanomultilayers, as depicted in the figure, are fabricated by means of electron beam evaporation . Electrical characterization allows identifying a conduction limited by electrode as the governing mechanism in the device. Optical and electro‐optical features indicate the activation and thus green emission of Tb 3+ ions, suggesting the possibility for future applications as integrated light‐emitting devices.