Structural and optical properties of La-doped BaSnO3 thin films grown by PLD. (January 2015)

• Record Type: Journal Article
• Authors: James, K.K.; Krishnaprasad, P.S.; Hasna, K.; Jayaraj, M.K.
• Is Part Of: Journal of physics and chemistry of solids. Volume 76(2015:Jan.)
• Page Start: 64
• Page End: 69
• Publication Date: 2015-01
• Subjects: Thin films -- Vapour deposition -- Raman spectroscopy -- X-ray diffraction -- Optical properties; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2014.07.024
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: In this study the structural and optical properties of lanthanum-doped BaSnO3 powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10 −4 mbar, phase pure BaSnO3 films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO3 doped with 0~7 at% of La. The highest conductivity, 9 Scm −1, was obtained for 7 at% La-doped BaSnO3 . Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO3 thin films. Highlights: La doped BaSnO3 thin films are deposited on fused silica by laser ablation. Fused silica is cheap compared to single crystalline substrates. Growth parameters are compatible with other perovskite films. These films can be incorporated in all-perovskite heterostructures. Conductivity for thin films exhibited a progressive increase up to7 at% of La.