Cite
HARVARD Citation
Kim, Z. et al. (2018). Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures. Solid-state electronics. pp. 12-17. [Online].
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Kim, Z. et al. (2018). Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures. Solid-state electronics. pp. 12-17. [Online].