Investigation of optical response in type-II InAs/AlSb nano-scale heterostructure: A novel dual structure. (2018)

• Record Type: Journal Article
• Authors: Anjum, S.G.; Yadav, Nisha; Nirmal, H.K.; Sharma, Meha; Siddiqui, M.J.; Alvi, P.A.
• Is Part Of: Materials today. Volume 5:Number 1(2018)Part 1
• Page Start: 1691
• Page End: 1695
• Publication Date: 2018
• Subjects: Type-II heterostrcuture -- InAs -- AlSb -- Optical Gain; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2017.11.265
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: This paper reports the optical properties of type-II InAs/AlSb novel dual nano-scale heterostructure. The duality of the heterostructure has been investigated by different types of doping introduced into the barrier region of the heterostructure. On doping of amount 1.5 x 10 15 /cm 3 in barriers, it has been observed that the type-II InAs/AlSb heterostructure can work as a quantum well infra-red photodetector (QWIP) as well as like a diode laser working in mid-infra red (MIR) region. In case of diode laser, the optical gain as well as lasing wavelength both has been found to shift by varying the doping concentration. The maximum optical gain within TM mode has been found ∼ 800/cm, and within TE mode, it is ∼ 2800 /cm. Due to its dual nature, the type-II InAs/AlSb nano-scale heterostructure is claimed as a novel structure and very suitable for optoelectronic applications.