Cite
HARVARD Citation
Upadhyay, B. et al. (2018). Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs. Solid-state electronics. pp. 1-6. [Online].
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Upadhyay, B. et al. (2018). Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs. Solid-state electronics. pp. 1-6. [Online].