Switching Performance of Normally-off 4H-SiC TI-VJFET. (2015)

• Record Type: Journal Article
• Authors: Munir, T.; Raza, W.; Naseem, S.; Abbas, F.
• Is Part Of: Materials today. Volume 2:Number 10(2015)Part B
• Page Start: 5634
• Page End: 5637
• Publication Date: 2015
• Subjects: VJFET -- switching analysis -- energy losses; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2015.11.104
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature 4H-SiC devices for high power/temperature and switching application. In this paper, switching characteristics of TI-VJFETs have been studied using 2D Sentaurus TCAD with variation of gate-drain capacitance (1∼50 pF) and temperature (RT∼200°C). It was found that switching time and energy losses increase with increase in gate–drain capacitance while as temperature increase from 25°C to 200°C, turn-on and energy loss (3∼ 5 ns & 1.8∼3 μJ) increase while turn-off and energy loss (9∼6 ns & 5.4 ∼3.6 μJ) decrease.