Modelling of multipurpose spintronic devices. (1st January 2015)

• Record Type: Journal Article
• Authors: Windbacher, Thomas; Ghosh, Joydeep; Makarov, Alexander; Sverdlov, Viktor; Selberherr, Siegfried
• Is Part Of: International journal of nanotechnology. Volume 12:Number 3/4(2015)
• Page Start: 313
• Page End: 331
• Publication Date: 2015-01-01
• Subjects: spin drift diffusion -- spin injection -- spin transport -- spin dynamics -- spin threshold current -- spin transfer torque -- flip flop -- latch -- bias–field free nano–oscillators -- multipurpose spintronic devices -- large scale integration -- nanotechnology -- spintronics -- modelling -- semiconductors -- charge depletion -- charge neutrality -- charge accumulation; 620.505
• DOI: 10.1504/IJNT.2015.067215
• Languages: English
• ISSNs: 1475-7435

Abstract

Modelling of spin transport and spin dynamics, as a prerequisite for designing spintronic devices, is considered. Spin injection into a semiconductor under charge depletion, charge neutrality, and charge accumulation is investigated. The existence of a maximum spin current density in the bulk at a large spin current density at the interface in charge accumulation is related to the spin current at the charge neutrality condition. Then, a novel multipurpose spintronic device is proposed and its structure as well as its working principle is explained. Two important applications for this structure, a flip flop and a nano–scale oscillator, are further elucidated and the properties related to these applications are investigated.