Enahnced Al0.11Ga0.89N/Cu2O Solar Cells by a Semi Transparent Electrode. Issue 1 (20th November 2017) - Hering, Karl Philipp
Abstract : Polycrystalline Cu2 O thin films are prepared on c‐sapphire substrates and n‐type Al 0 .11 Ga 0 .89 N templates by radio frequency sputtering at a temperature of 650 K employing a metallic target, an argon/oxygen gas mixture as well as a biased semi transparent electrode placed between the target and the substrate. Introducing that grid, we demonstrate the possibility to tune the cuprous oxide thin film properties, especially the morphology, by controlling the electron temperature in the plasma as well as the beneficial effect of a suspected reduction of interface state densities at photovoltaic heterostructures. Abstract : The possibility to tune the properties of polycrystalline cuprous oxide thin films sputtered with a capacitively coupled radio frequency deposition by a semitransparent electrode was demonstrated. The influence of the bias voltage, applied to the semitransparent electrode, on the heterointerface and the electrical transport properties of the heterojunction solar cells were studied. Furthermore, the ion energy distribution between electrode and substrate holder was evaluated.