Dual Modulated Lateral Photoresistance Effect Observed on Silicon‐Based Discontinuous Copper Film. (22nd November 2017)

• Record Type: Journal Article
• Authors: Gan, Zhikai; Zhou, Peiqi; Huang, Xu; Mei, Chunlian; Wang, Hui
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-22
• Subjects: copper -- electric pulse -- laser; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700293
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: A dual modulated lateral photoresistance effect is observed on silicon‐based discontinuous copper film. Through the spatial movement of a laser beam spot, the lateral resistance of the structure can be modulated linearly with polarity under different testing mode. Through applying an electric pulse, the lateral resistance versus laser position curve can be entirely shifted. Carrier diffusion and drift model and charge trap model are set up to explain the dual modulated lateral photoresistance effect. This work adds functionality to Cu materials and is useful for the development of laser‐ and pulse‐modulated photoelectric resistors, switches, and sensors. Abstract : A dual modulated lateral photoresistance effect on silicon‐based discontinuous copper film is demonstrated. Through moving the laser spot and applying an electric pulse, the lateral resistance can be modulated linearly and shifted entirely, which is attributed to carrier interaction and charge trapping.