Thin‐Film Semiconductors: Ambipolar Organic Field‐Effect Transistors Based on a Dual‐Function, Ultrathin and Highly Crystalline 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10‐DNTT) Layer (Adv. Electron. Mater. 12/2017). (11th December 2017)

• Record Type: Journal Article
• Authors: Huang, Shuyun; Peng, Boyu; Chan, Paddy Kwok Leung
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-11
• Subjects: ambipolar OFETs -- bilayer thin films -- dual solution shearing -- ultrathin film; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201770057
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Bilayer ambipolar OFETs based on thermal evaporated and dual‐solution‐shearing (DSS) processed ultra‐thin films as the bottom template layer are described by Paddy Kwok Leung Chan and co‐workers in article number1700268 . The DSS‐processed ultra‐thin films with densely packed long alkyl chains act as a p‐channel active layer and growth template for the upper n‐type semiconductor layer.