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HARVARD Citation
Mukherjee, K. et al. (2017). TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectronics and reliability. pp. 350-356. [Online].
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Mukherjee, K. et al. (2017). TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectronics and reliability. pp. 350-356. [Online].