Cite
HARVARD Citation
Abbate, C. et al. (2017). Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics and reliability. pp. 314-320. [Online].
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Abbate, C. et al. (2017). Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics and reliability. pp. 314-320. [Online].