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HARVARD Citation
Tajalli, A. et al. (2017). Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectronics and reliability. pp. 282-286. [Online].
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Tajalli, A. et al. (2017). Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectronics and reliability. pp. 282-286. [Online].