The microstructure, energy storage and dielectric behaviours of (Ti, Zn)-doped Bi0.97Nd0.03FeO3 thin films. (2nd January 2018)

• Record Type: Journal Article
• Authors: Zhang, Y. X.; Yang, C. H.; Guo, Y. C.; Song, J. H.; Yao, Q.; Yi, Z. D.
• Is Part Of: Materials technology. Volume 33:Number 1(2018)
• Page Start: 10
• Page End: 15
• Publication Date: 2018-01-02
• Subjects: Film thickness -- ions-doping -- ferroelectric -- leakage current -- microstructure -- dielectric property -- thin film -- energy storage; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Technological innovations -- Periodicals; 620.1105
• DOI: 10.1080/10667857.2017.1370816
• Languages: English
• ISSNs: 1066-7857

Abstract

Abstract: (Ti, Zn)-co-doped Bi0.97 Nd0.03 FeO3 (BNFTZ) thin films with different thicknesses were prepared directly on indium tin oxide/glass substrates deriving from the precursor solutions with different solution concentrations. The X-ray diffraction, scanning electron microscopy and insulating/ferroelectric/dielectric measurements were utilised to characterise the BNFTZ thin films. Both BNFTZ thin films with the thicknesses of 160 and 320 nm are crystallised into phase-pure perovskite structure without second phase. Compared to the film of 160 nm, a lower leakage current can be obtained in BNFTZ film of 320 nm due to due to its denser microstructure with smaller grain size. The film with 320 nm thickness possesses a high energy-storage efficiency of 87%, which can be ascribed to the slim P – E loop. At 100 kHz, the film of 320 nm owns lower dielectric constant (~91) and dissipation factor (~0.10). The possible contributions are discussed to explain the difference in the related performances for BNFTZ thin films with different thicknesses.