Solution‐Processed Wide‐Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field‐Effect Transistor Memory. Issue 2 (22nd November 2017)

• Record Type: Journal Article
• Authors: Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei
• Is Part Of: Small. Volume 14:Issue 2(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-22
• Subjects: nanostructures arrays -- nonvolatile memory -- phase separation -- solution process -- wide‐bandgap organic semiconductors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201701437
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: In this paper, the development of organic field‐effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide‐bandgap (WBG) small‐molecule organic semiconductor material [2‐(9‐(4‐(octyloxy)phenyl)‐9H‐fluoren‐2‐yl)thiophene]3 (WG3 ) is reported. The WG3 NSs are prepared from phase separation by spin‐coating blend solutions of WG3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG3 film, the device based on WG3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge‐exciton annihilation efficiency induced by increased contact area between the WG3 NSs and pentacene layer. This versatile solution‐processing approach to preparing WG3 NSs arrays as charge trapping sites allows for fabrication of high‐performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. Abstract : Wide‐bandgap organic semiconductor nanostructures are prepared via a simple solution process and serve as charge storage elements for nonvolatile organic field‐effect transistor (OFET) memory. The nanocolumn‐like structures contributes to an increased contact area between the trapping and semiconductor layers, which effectively improve the charge trapping/charge‐exciton annihilation efficiency. This versatile solution‐based approach allows for simple fabrication of high‐performance nonvolatile OFET memory.