Light‐Responsive Ion‐Redistribution‐Induced Resistive Switching in Hybrid Perovskite Schottky Junctions. (23rd November 2017)

• Record Type: Journal Article
• Authors: Guan, Xinwei; Hu, Weijin; Haque, Md Azimul; Wei, Nini; Liu, Zhixiong; Chen, Aitian; Wu, Tom
• Is Part Of: Advanced functional materials. Volume 28:Number 3(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-23
• Subjects: hybrid perovskites -- interface -- resistive switching -- Schottky junction -- vacancy migration; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201704665
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite‐based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high‐quality capacitor structure made of an MAPbBr3 (CH3 NH3 PbBr3 ) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 10 3, endurance over 10 3 cycles, and a retention time of 10 4 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3 /ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament‐type switching behavior. This work elucidates the important role of processing‐dependent defects in the charge transport of hybrid perovskites and provides insights on the ion‐redistribution‐based RS in perovskite memory devices. Abstract : An interface‐based hybrid perovskite‐based resistive switching (RS) memory device is fabricated and characterized. Because of the elements gradient distribution and movable ionic charges in the perovskite film, the Schottky junction at the MAPbBr3 /ITO interface can be reliably modulated, directly giving rise to RS with good endurance and data retention.