Photodiodes: Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes (Adv. Funct. Mater. 48/2017). (20th December 2017)

• Record Type: Journal Article
• Authors: Kim, Jong Su; Choi, Young Jin; Woo, Hwi Je; Yang, Jeehye; Song, Young Jae; Kang, Moon Sung; Cho, Jeong Ho
• Is Part Of: Advanced functional materials. Volume 27:Number 48(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-20
• Subjects: graphene -- organic photodiodes -- Schottky barriers -- vertical heterostructures -- work function tunability; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201770286
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number1704475, Moon Sung Kang, Jeong Ho Cho, and co‐workers demonstrate a new organic vertical p‐n heterojunction photodiode structure that is stacked onto the graphene electrodes. Controlling the Schottky barrier height at the p‐type organic semiconductor‐graphene junction can i) suppress the dark current density and ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.