Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon. Issue 12 (28th September 2017)

• Record Type: Journal Article
• Authors: Simoen, Eddy; Jayachandran, Suseendran; Delabie, Annelies; Caymax, Matty; Heyns, Marc
• Is Part Of: Physica status solidi. Volume 214:Issue 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-28
• Subjects: dangling bonds -- deep‐level transient spectroscopy -- interface states -- silicon -- silicon‐oxygen superlattice; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssc.201700136
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this paper, the deep levels found by Deep‐Level Transient Spectroscopy in Si‐O superlattices (SLs) on n‐type silicon are reported. Samples have been grown with one, two or five silicon‐oxygen layers, separated by 3 nm of silicon. A Cr Schottky barrier (SB) is thermally evaporated on top of the SL. Similar as for p‐type silicon, no deep levels have been found for a bias pulse in depletion, while a broad distribution of electron traps shows up when pulsing into forward bias. At the same time, these bands are absent in a zero SL reference sample. Similar as for the p‐type results, the trap filling of the electron states exhibits a logarithmic capture. The possible origin of this slow filling will be discussed. Abstract : The deep levels found by Deep‐Level Transient Spectroscopy in Si‐O superlattices (SLs) on n‐type silicon are reported. A broad distribution of electron traps shows up when pulsing into forward bias. The trap filling of the electron states exhibits a logarithmic capture, indicating an extended‐defect origin.