Cite
HARVARD Citation
Rebohle, L. et al. (2017). Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing. Physica status solidi. 14 (12), p. n/a. [Online].
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Rebohle, L. et al. (2017). Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing. Physica status solidi. 14 (12), p. n/a. [Online].