Difluorobenzoxadiazole‐Based Polymer Semiconductors for High‐Performance Organic Thin‐Film Transistors with Tunable Charge Carrier Polarity. (13th November 2017)

• Record Type: Journal Article
• Authors: Shi, Shengbin; Wang, Yuxi; Uddin, Mohammad Afsar; Zhou, Xin; Guo, Han; Liao, Qiaogan; Zhu, Xucheng; Cheng, Xing; Woo, Han Young; Guo, Xugang
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-13
• Subjects: ambipolarity -- difluorobenzoxadiazole‐based polymer semiconductor -- electron mobility -- hole mobility -- organic thin‐film transistor; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700100
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: A series of difluorobenzoxadiazole‐based copolymers are synthesized for applications in high‐performance organic thin‐film transistors. Four π‐spacers with distinct electrical properties, bithiophene, difluorobithiophene, 2‐thiophene‐2′‐thiazole, and bithiazole, are inserted between head‐to‐head linkage containing bithiophene to promote polymer chain packing. Among the series, polymer containing bithiophene exhibits a unipolar p‐channel performance with a substantial hole mobility of 2.92 cm 2 V −1 s −1, and minor structural modification leads to polymer containing bithiazole showing a remarkable unipolar n‐channel performance with an electron mobility of 0.83 cm 2 V −1 s −1 . Through a simple structural modification, such a drastic charge carrier polarity change without sacrificing mobility is elusive in organic thin‐film transistor field. Polymer containing hybrid 2‐thiophene‐2′‐thiazole spacer exhibits ambipolarity with encouraging hole/electron mobility of 0.27/0.35 cm 2 V −1 s −1, and polymer containing difluorobithiophene shows an average hole mobility of 0.53 cm 2 V −1 s −1 . Among the results, p‐channel transistors exhibit encouraging device stability. The results demonstrate that difluorobenzoxadiazole is a versatile building block for enabling high‐mobility semiconductors with variable charge carrier polarity. X‐ray diffraction reveals that all difluorobenzoxadiazole‐based polymers have substantial film crystallinity with close π‐stacking and varied polymer chain orientation. The structure–property–device performance correlations from this study offer useful insights for materials innovation in organic thin‐film transistors. Abstract : A series of difluorobenzoxadiazole‐based copolymers with tunable charge‐carrier polarity are synthesized. Polymer containing bithiophene shows a substantial hole mobility of 2.92 cm 2 V −1 s −1, and minor structural variation leads to polymer incorporating bithiazole with a remarkable electron mobility of 0.83 cm 2 V −1 s −1 . The results demonstrate that difluorobenzoxadiazole is a versatile building block for enabling high‐mobility polymer semiconductors.