Indium-doped ZnO horizontal nanorods for high on-current field effect transistors. Issue 87 (1st December 2017)

• Record Type: Journal Article
• Authors: Zhu, Ziqiang; Li, Borui; Wen, Jian; Chen, Zhao; Chen, Zhiliang; Zhang, Ranran; Ye, Shuangli; Fang, Guojia; Qian, Jun
• Is Part Of: RSC advances. Volume 7:Issue 87(2017)
• Page Start: 54928
• Page End: 54933
• Publication Date: 2017-12-01
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra09105b
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : High on-current field effect transistors (FETs) are highly desirable for driving information displays such as active matrix organic light-emitting diode displays. Abstract : High on-current field effect transistors (FETs) are highly desirable for driving information displays such as active matrix organic light-emitting diode displays. Herein, indium-doped ZnO (IZO) horizontal nanorod arrays were fabricated for high on-current FETs by a facile and tunable hydrothermal method. We have found that indium doping can influence the growth behavior of ZnO nanorods. After indium doping, the ZnO nanorods tend to grow better along the horizontal direction and have a better flat morphology. More importantly, indium doping increases the carrier concentration of the IZO nanorods; this leads to better transfer and output performances of the IZO nanorod FETs. Therefore, the IZO nanorod FET with a high on-current of 6.39 × 10 −4 A and a field effect mobility of 26.3 cm 2 V −1 s −1 has been synthesized and demonstrated in this study.