A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology. (29th June 2017)

• Record Type: Journal Article
• Authors: Singh, Ajay Kumar; Naresh Kumar, B.; Ramana Murthy, G.; Prabu, C.M.R.
• Is Part Of: International journal of numerical modelling. Volume 31:Number 1(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-29
• Subjects: carbon nanotube -- extension resistance -- FET -- gate modulated potential -- subthreshold swing -- transconductance; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2261
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: This paper discusses a comprehensive analytical study of electrical properties of single‐wall conventional carbon nanotube field‐effect transistor (CNTFET) devices of subthreshold swing (SS), transconductance ( g m ), and extension resistance. The analytical expressions for SS and g m have been derived based on channel modulated potential. In the study, it was observed that SS value of the CNTFET device is equal to 60 mV/decade, which is smaller than the conventional and double gate metal‐oxide‐semiconductor field‐effect transistors. The subthreshold swing degrades at larger tube's diameter and gate‐source voltage due to increased source‐drain leakage current. Carbon nanotube field‐effect transistor devices achieve larger g m at large gate‐source voltage, which has a disadvantage of reducing the allowable voltage swing at the drain. The extension resistance of the device falls with diameter of the tube.