Effect of Gd doping on crystalline orientation, structural and electric properties of PZT thin films prepared by Sol-Gel methods. Issue 183 (2nd September 2017)

• Record Type: Journal Article
• Authors: Xu, Wencai; Li, Qi; Yin, Zhifu; Wang, Wenqiang; Chu, Shichao; Zou, Helin
• Is Part Of: Integrated ferroelectrics. Issue 183(2017)
• Page Start: 100
• Page End: 109
• Publication Date: 2017-09-02
• Subjects: PGZT thin films -- (100) preferential orientation -- dielectric properties -- ferroelectric properties -- piezoelectric properties; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2017.1375831
• Languages: English
• ISSNs: 1058-4587

Abstract

ABSTRACT: Gadolinium (Gd)-doped lead zirconium titanate (PGZT) thin films have been prepared by Sol-Gel methods to investigate the effects of Gd doping on crystalline orientation, structural and electric properties of lead zirconium titanate (PZT) films according to doping concentration from 0% to 5%. Conventional heat process and appropriate doping concentration, without introducing a single crystal seed layer, were used for obtaining (100)-oriented PGZT thin films with dense columnar structures. The maximum dielectric constant (1310.35 at 100 Hz) and the optimum ferroelectric properties were obtained for 2% Gd-doped film. 1% Gd-doped PZT film exhibited excellent piezoelectric properties.